Influence of Thickness and Ta Buffer Layer on the Magnetic Properties of TbFeCo Thin Films
Journal of Superconductivity and Novel Magnetism, cilt.39, sa.4, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 39 Sayı: 4
- Basım Tarihi: 2026
- Doi Numarası: 10.1007/s10948-026-07221-9
- Dergi Adı: Journal of Superconductivity and Novel Magnetism
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Compendex, INSPEC, Academic Search Ultimate (EBSCO), Engineering Source (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Anahtar Kelimeler: Magnetic anisotropy, Magnetic hysteresis, Thin films
- Ankara Üniversitesi Adresli: Evet
Özet
We systematically investigated the magnetic properties of TbFeCo thin films as a function of thickness between 17 and 34 nm, with and without a Ta buffer layer, focusing on anisotropy behavior and magnetic compensation effects. Films grown on thermally oxidized SiO2/Si substrates without Ta buffer layer exhibit pronounced perpendicular magnetic anisotropy (PMA), which is attributed to strain-induced effects associated with surface roughness induced by the substrate. Across both series, the out-of-plane magnetization remains higher than the in-plane response, and the minimum saturation magnetization occurs at intermediate thicknesses, suggesting proximity to a thickness-driven magnetic compensation regime. Notably, the compensation-like minimum appears at significantly greater thicknesses than values reported for films grown on other substrates, indicating that thermally oxidized Si shifts the effective compensation thickness beyond 24 nm. These findings highlight the crucial role of substrate interface and structural morphology in tailoring the magnetic anisotropy and compensation behavior of TbFeCo thin films for spintronic applications.