Research Information System
Thin Solid Films, vol.185, no.1, pp.1-7, 1990 (SCI-Expanded)
The conduction mechanism in vacuum-evaporated CdS thin films with various indium doping levels is examined using temperature-dependent conductivity and Hall effect measurements. It was found that the predominating conduction mechanism changes from thermionic emission to tunnelling of the carriers through the potential barriers, as the doping level increases. We note that the temperature coefficient α of the linearly temperature-dependent intergrain barrier height φ{symbol}b can be calculated in the case of low doping only. The existing contradiction in the literature on the sign of α is shown to be due to different approaches to the thermally activated mobility expression of Petritz, and a new approach for the calculation of α is proposed which results in a negative sign for α for the samples examined in this work as well as for those reported earlier. © 1990.