Current transport mechanisms of n-ZnO/p-CuO heterojunctions

Kuş F. Ö., Serin T., Serin N.

Journal of Optoelectronics and Advanced Materials, vol.11, no.11, pp.1855-1859, 2009 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 11 Issue: 11
  • Publication Date: 2009
  • Journal Name: Journal of Optoelectronics and Advanced Materials
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1855-1859
  • Keywords: CuO, Heterojunction, I-V characteristics, Sol-gel, ZnO
  • Ankara University Affiliated: Yes

Abstract

In this study, n-ZnO/p-CuO heterojunction have been fabricated by sol-gel dip-coating technique which is simple and inexpensive. The structure of the p-CuO/n-ZnO was analyzed by X-ray diffraction spectroscopy and UV-VIS spectroscopy. The electrical junction properties were characterised by temperature dependent current-voltage (I-V) characteristics and at high frequency capacitance-voltage (C-V) characteristic at room temperature. The structure showed non-ideal behaviour of I-V characteristics with an ideality factor of 3.5 at room temperature. Temperature dependent forward current-voltage measurements suggest that trap-assisted multi-step tunnelling is the dominant current mechanism in this structure.