Current transport mechanisms of n-ZnO/p-CuO heterojunctions

Kuş F. Ö., Serin T., Serin N.

Journal of Optoelectronics and Advanced Materials, cilt.11, sa.11, ss.1855-1859, 2009 (SCI-Expanded, Scopus) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 11
  • Basım Tarihi: 2009
  • Dergi Adı: Journal of Optoelectronics and Advanced Materials
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1855-1859
  • Anahtar Kelimeler: CuO, Heterojunction, I-V characteristics, Sol-gel, ZnO
  • Ankara Üniversitesi Adresli: Evet

Özet

In this study, n-ZnO/p-CuO heterojunction have been fabricated by sol-gel dip-coating technique which is simple and inexpensive. The structure of the p-CuO/n-ZnO was analyzed by X-ray diffraction spectroscopy and UV-VIS spectroscopy. The electrical junction properties were characterised by temperature dependent current-voltage (I-V) characteristics and at high frequency capacitance-voltage (C-V) characteristic at room temperature. The structure showed non-ideal behaviour of I-V characteristics with an ideality factor of 3.5 at room temperature. Temperature dependent forward current-voltage measurements suggest that trap-assisted multi-step tunnelling is the dominant current mechanism in this structure.