Persistent current through a semiconductor quantum dot with Gaussian confinement

BOYACIOĞLU B., Chatterjee A.

PHYSICA B-CONDENSED MATTER, cilt.407, sa.17, ss.3535-3538, 2012 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 407 Sayı: 17
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.physb.2012.05.018
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3535-3538
  • Anahtar Kelimeler: Quantum dots, Persistent current, Gaussian potential, SCHRODINGER-EQUATION, POTENTIALS, RING
  • Ankara Üniversitesi Adresli: Evet

Özet

The persistent diamagnetic current in a GaAs quantum dot with Gaussian confinement is calculated. It is shown that except at very low temperature or at high temperature, the persistent current increases with decreasing temperature. It is also shown that as a function of the dot size, the diamagnetic current exhibits a maximum at a certain confinement length. It is furthermore shown that for a shallow potential, the persistent current shows an interesting maximum structure as a function of the depth of the potential. At low temperature, the peak structure is pretty sharp but becomes broader and broader with increasing temperature. (C) 2012 Elsevier B.V. All rights reserved.