Effect of Rashba spin-orbit coupling on the electronic, thermodynamic, magnetic and transport properties of GaAs, InAs and InSb quantum dots with Gaussian confinement
PHYSICA B-CONDENSED MATTER, cilt.498, ss.43-48, 2016 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 498
- Basım Tarihi: 2016
- Doi Numarası: 10.1016/j.physb.2016.06.012
- Dergi Adı: PHYSICA B-CONDENSED MATTER
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.43-48
- Anahtar Kelimeler: Semiconductor quantum dots, Gaussian confinement, Electronic, thermal, magnetic and transport properties, Rashba spin-orbit interaction, ENERGY
- Ankara Üniversitesi Adresli: Evet
Özet
The effect of Rashba spin orbit interaction on the electronic, thermodynamic, magnetic and transport properties of a one-electron Gaussian quantum dot is investigated in the presence of a magnetic field and its interaction with the electron spin using the canonical ensemble approach. The temperature-dependent energy, magnetization, susceptibility, specific heat and the persistent current are calculated as a function of the spin orbit coupling parameter. The results are applied to GaAs, InAs and InSb quantum dots. (C) 2016 Published by Elsevier B.V.