High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector

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Kimukin I., Ozbay E., Biyikli N., Kartaloǧlu T., Aytür O., Unlu S., ...Daha Fazla

Applied Physics Letters, cilt.77, sa.24, ss.3890-3892, 2000 (SCI-Expanded, Scopus) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 77 Sayı: 24
  • Basım Tarihi: 2000
  • Doi Numarası: 10.1063/1.1329628
  • Dergi Adı: Applied Physics Letters
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3890-3892
  • Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
  • Ankara Üniversitesi Adresli: Hayır

Özet

We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission photodiodes operating at 1.3 μm. The devices were fabricated by using a microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 μm and a nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. © 2000 American Institute of Physics.