Electrical properties of Langmuir-Blodgett thin films using calixarene molecules

Özbek Z., Çapan R., SARI H., Uzunoglu T., Davis F.

Journal of Optoelectronics and Advanced Materials, cilt.11, sa.10, ss.1412-1415, 2009 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 10
  • Basım Tarihi: 2009
  • Dergi Adı: Journal of Optoelectronics and Advanced Materials
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1412-1415
  • Anahtar Kelimeler: Calixarene, Electrical properties, Langmuir-Blodgett thin films
  • Ankara Üniversitesi Adresli: Evet

Özet

Calix[8]acid/calix[4]amine alternate layer Metal-Langmuir-Blodgett film-Metal (M/LB/M) structures were fabricated onto an aluminized glass substrate. Film deposition results indicated that these molecules are suitable to deposit with a highly ordered alternate layer structure. Studies were made of the nano-layer structures' electrical properties such as I-V and C-f. By analyzing I-V curves and assuming a Schottky conduction mechanism, the barrier height was found to be 0.67 eV.