A Self-Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W-1) based on SnO2 Nanostructures/Si Heterojunctions

ÖZEL K., YILDIZ A.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, cilt.15, sa.6, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 15 Sayı: 6
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1002/pssr.202100085
  • Dergi Adı: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: heterojunctions, nanostructures, self-powered devices, ultraviolet photodetectors
  • Ankara Üniversitesi Adresli: Evet

Özet

The development of high-performance, self-powered ultraviolet (UV) photodetectors (PDs) is of utmost interest for military and industrial applications. Herein, a novel design scheme for enhancing the performance of self-powered PDs based on the p-n heterojunction is proposed. The device architecture is engineered by integrating a nanostructured SnO2 layer into the n-SnO2/p-Si heterojunction. The resulting device yields an impressively high photoresponsivity of 22.73 A W-1, a large external quantum efficiency of 9065 %, and an outstanding detectivity of 1.57 x 10(13) Jones at -5 V for 311 nm. Notably, the PDs possess self-powered characteristics with an extremely high photoresponsivity of 208 mA W-1 and detectivity of 1.17 x 10(12) Jones toward 311 nm without any power supply, suggesting their high potential for future energy-efficient, self-powered, high-performance UV-detecting application.