Chelant-enhanced solution for wafer-scale synthesis of few-layer WS2 films

Isarraraz M., Pena P., Sayyad M., Yang S., Li H., Akhavi A., ...Daha Fazla

MRS BULLETIN, cilt.48, sa.10, ss.1073-1085, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 48 Sayı: 10
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1557/s43577-023-00557-w
  • Dergi Adı: MRS BULLETIN
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Applied Science & Technology Source, Compendex, INSPEC
  • Sayfa Sayıları: ss.1073-1085
  • Anahtar Kelimeler: Tungsten disulfide (WS2), Spin-coat processing, Chelant, Two-dimensional materials, Thin films, Electron microscopy, Density functional theory (DFT), SINGLE-LAYER, LARGE-AREA, RAMAN-SPECTROSCOPY, MOS2, GROWTH, PHOTOLUMINESCENCE, DEPOSITION, SULFURIZATION, WSE2
  • Ankara Üniversitesi Adresli: Evet

Özet

Large area growth of few-layer transitional-metal dichalcogenide thin films using a solution-based process are being considered as potentially scalable thin-film processing for future nanoelectronics. A wafer-scale growth of two-dimensional tungsten disulfide (WS2) films with consistent uniformity still remains a challenge in all types of growth methods. Specifically, the synthesis of WS2 using a solution-based approach has been a difficult task due to the complex surface chemistry involved. In the current study, we report on the wafer-scale synthesis of uniform WS2 using a spin-coat process. Previously, a solvent of ethylenediaminetetraacetic acid in DMSO with ammonium tetrathiomolybdate ((NH4)(2)MoS4), and a thermolysis step were used to achieve uniform wafer-scale growth of few-layer MoS2 films. Here, we present a study of three different chelating agents using dimethyl sulfoxide (DMSO) as a solvent to demonstrate the chelant's critical role in growing uniform dichalcogenide films. Of these three chelating agents, glycine consistently produced wafer-scale growth.