High-detectivity ultraviolet-B photodetector based on SnO2 thin film/Si heterojunction

ÖZEL K., YILDIZ A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.36, sa.9, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 36 Sayı: 9
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1088/1361-6641/ac1051
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Anahtar Kelimeler: UV-B radiation, SnO2 thin films, p-n heterojunction, photodetector, QUANTUM EFFICIENCY, SOLAR-CELLS, DENSITY
  • Ankara Üniversitesi Adresli: Evet

Özet

Composed of a metal oxide (MO (x) ) material-based emitter layer, p-n heterojunction photodetectors (HPDs) challenge their homojunction counterparts for use in new generation applications requiring high performance. Here, n-type SnO2 thin film is deposited on p-type Si (100) substrate to form a low-cost and high-performance HPD with its decent photo-sensing ability. The device responds to ultraviolet (UV)-B light under reverse bias as short as 40 ms. High detectivity of 1.38 x 10(13) Jones, pronounced responsivity of 2.16 A W-1 and large UV/visible rejection ratio of 221 are found for the device. Eventually, these satisfactory figure of merits of the device disclose its superiority for selective-detection of weak optical signals in the UV-B regime of UV radiation spectrum.