Highly Photosensitive Colloidal Quantum Well Based Nanocrystal Skins Assisted by Orientation Control

IŞIK F., Bozkaya T., Bozkaya I., Delikanli S., CANIMKURBEY B., Demir H. V.

Nano Letters, cilt.25, sa.47, ss.16601-16607, 2025 (SCI-Expanded, Scopus) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 25 Sayı: 47
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1021/acs.nanolett.5c03234
  • Dergi Adı: Nano Letters
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Chimica, Compendex, INSPEC, MEDLINE, Nature Index
  • Sayfa Sayıları: ss.16601-16607
  • Anahtar Kelimeler: charge carrier transfer, colloidal quantum wells, light-sensitive nanocrystal skins, photosensing, self-assembly
  • Ankara Üniversitesi Adresli: Evet

Özet

Colloidal quantum wells (CQWs) exhibit superior optical characteristics, including giant oscillator strengths and high absorption cross sections, making them attractive for light-sensing applications. In this study, we fabricated light-sensitive nanocrystal skin (LS-NS) devices using a single-layer edge-up oriented CQW film as the active absorber and achieved a significant enhancement in the performance by leveraging the controlled orientation of the self-assembled CQWs. The LS-NS devices with edge-up oriented CQW film show eight times higher sensitivity and three times higher voltage build-up compared to LS-NS devices with spin-coated CQW films. Such enhancements are due to the trapping of the holes on the edges of the CQWs because of defect-ridden edges, which helps hopping of the holes localized within close proximity to the metal–CQW interface. The LS-NS device with edge-up CQW film exhibited a record-high photovoltage buildup of 600 mV, three times greater than the highest previously reported value for similar LS-NS architectures.