Functionalization of silicon surface by thiadiazole molecule: A DFT study

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KADEROĞLU Ç.

SURFACE SCIENCE, cilt.674, ss.87-93, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 674
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.susc.2018.04.009
  • Dergi Adı: SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.87-93
  • Anahtar Kelimeler: Thiadiazole, DFT, Heterocyclic molecules, Adsorption, Electronic structure, Silicon surface, GENERALIZED GRADIENT APPROXIMATION, SCANNING-TUNNELING-MICROSCOPY, DRM MICROWAVE SPECTROSCOPY, TOTAL-ENERGY CALCULATIONS, AUGMENTED-WAVE METHOD, ELECTRONIC-STRUCTURE, SEMICONDUCTOR SURFACES, BASIS-SET, CHEMISTRY, SI(100)
  • Ankara Üniversitesi Adresli: Evet

Özet

The first principles density functional theory (DFT) calculations have been used to investigate the atomic and electronic properties of thiadiazole adsorption on the Si(001) surface. A (2 x 2) reconstructed clean substrate surface has been chosen to give the molecule sufficient space to relax into its most favourable position. A total of eighteen bonding model including bridge-type bonding, and [2 + 2]/[4 + 2] cycloaddition mechanisms for four structural isomers of thiadiazole molecule have been discussed in these calculations. The most stable bonding configuration for each of the four isomers on the clean silicon surface has been determined by performing total energy calculations. Electronic structures of the stable surfaces have been investigated by plotting the total density of states (TDOS) and energy band diagrams. Charge densities have been plotted to determine the origin of the surface states appeared in the fundamental band gap of silicon. Finally, partial density of states (PDOS) have been plotted to see the contributions from s- and p-orbitals.