Switching from negative to positive nonlinear absorption in p type 0.5 at% Sn doped GaSe semiconductor crystal

Yüksek M., ELMALI A., Karabulut M., Mamedov G.

Optical Materials, cilt.31, sa.11, ss.1663-1666, 2009 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 31 Sayı: 11
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.optmat.2009.04.003
  • Dergi Adı: Optical Materials
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1663-1666
  • Anahtar Kelimeler: Saturable absorption, Sn doped GaSe crystal, Two photon absorption, Z-scan
  • Ankara Üniversitesi Adresli: Evet

Özet

The nonlinear absorption properties of p type 0.5 at% Sn doped GaSe crystal have been studied by using open-aperture Z-scan technique under 1064 nm wavelength and 4 ns or 65 ps pulse duration. A switching from negative nonlinear absorption (saturated absorption) to positive nonlinear absorption (two photon absorption) has been observed as the input laser irradiance increases from 0.049 GW/cm2 to 0.106 GW/cm2. The nonlinear absorption coefficient increases monotonically with the increase of pulse duration from 65 ps to 4 ns. © 2009 Elsevier B.V. All rights reserved.