Substrate-tunable non-topological edge states in Bi2Se3 thin film strip
Solid State Communications, cilt.416, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 416
- Basım Tarihi: 2026
- Doi Numarası: 10.1016/j.ssc.2026.116510
- Dergi Adı: Solid State Communications
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Chimica, Compendex, INSPEC, Academic Search Ultimate (EBSCO), Engineering Source (EBSCO)
- Anahtar Kelimeler: BHZ Hamiltonian, Topological insulators, Trivial edge states
- Ankara Üniversitesi Adresli: Evet
Özet
Here we theoretically demonstrate that, for a finite thickness and width Bi2Se3 strip, trivial edge states emerge before the band inversion in conduction or valence bands depending on the strength of asymmetry between them, and can be tuned by substrate-induced surface optical phonon coupling. We introduce an analytical approach based on the LLP approximation of polaron theory to take into account the effect of electron–phonon coupling on the material parameters of the prototypical three-dimensional Bi2Se3 effective Hamiltonian, and then construct its effective two-dimensional BHZ type 4-band model Hamiltonian for the Bi2Se3 thin film to analyze its topologically nontrivial protected gapless edge states as well as trivial ones for the case of a finite strip geometry. We found that the emergence of trivial edge states strongly depend on the asymmetry between conduction and valence bands, which can be controlled by the choice of the substrate as well as the thickness and width of Bi2Se3 strip.