Design and Simulation of SWIR nBn-InGaAs Photodetector with AlGaAs Barrier

Tok Ç., Satilmiş M., Keleş H., Oǧuz F., SARI H., Özbay E.

2025 European Optical Society Annual Meeting, EOSAM 2025, Delft, Hollanda, 24 - 28 Ağustos 2025, cilt.335, (Tam Metin Bildiri) identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 335
  • Doi Numarası: 10.1051/epjconf/202533511002
  • Basıldığı Şehir: Delft
  • Basıldığı Ülke: Hollanda
  • Ankara Üniversitesi Adresli: Evet

Özet

The article discusses the simulation of an nBn-InGaAs photodetector using Silvaco TCAD at 300 K, focusing on optimizing the barrier performance and reducing the valence band offset. It explores the device-s electrical and optical behaviors, including dark current, photocurrent, and capacitance. The results show a peak responsivity of 0.91 A/W at 1.55 μm and a junction capacitance of 9 pF at -5 V. Adding an anti-reflection coating notably improved the optical performance, highlighting the structure-s potential for efficient infrared photodetection.