Design and Simulation of SWIR nBn-InGaAs Photodetector with AlGaAs Barrier

Tok Ç., Satilmiş M., Keleş H., Oǧuz F., SARI H., Özbay E.

2025 European Optical Society Annual Meeting, EOSAM 2025, Delft, Netherlands, 24 - 28 August 2025, vol.335, (Full Text) identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 335
  • Doi Number: 10.1051/epjconf/202533511002
  • City: Delft
  • Country: Netherlands
  • Ankara University Affiliated: Yes

Abstract

The article discusses the simulation of an nBn-InGaAs photodetector using Silvaco TCAD at 300 K, focusing on optimizing the barrier performance and reducing the valence band offset. It explores the device-s electrical and optical behaviors, including dark current, photocurrent, and capacitance. The results show a peak responsivity of 0.91 A/W at 1.55 μm and a junction capacitance of 9 pF at -5 V. Adding an anti-reflection coating notably improved the optical performance, highlighting the structure-s potential for efficient infrared photodetection.