Influences of carbon content and power density on the PECVD grown a-Si1-x : C-x : H thin films

AKAOĞLU B., Gulses A., Atilgan I., Katircioglu B.

VACUUM, vol.81, no.1, pp.120-125, 2006 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 81 Issue: 1
  • Publication Date: 2006
  • Doi Number: 10.1016/j.vacuum.2006.03.005
  • Journal Name: VACUUM
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.120-125
  • Keywords: plasma CVD, amorphous alloys, deposition uniformity, optical properties, A-SI-H, AMORPHOUS HYDROGENATED CARBON, CHEMICAL-VAPOR-DEPOSITION, OPTICAL-CONSTANTS, SOLAR-CELLS, MECHANISM, RADICALS, SILICON, THICKNESS
  • Ankara University Affiliated: No

Abstract

Large area electronics require large size thin films whose eventual inhomogeneities arise as a problem. Hydrogenated amorphous silicon carbide thin films (a-Si1-xCx:H) for four different source gas mixtures at two power densities were deposited by plasma enhanced chemical vapor deposition (PECVD) technique. The degree of film homogeneity was investigated through measurements of deposition rate, refractive index and optical energy gap along the radial direction of bottom electrode. Both ellipsometer at various incident angles and optical transmittance at normal incidence were used in mutual control as diagnosing tools. It seems there is a critical power density beyond which inhomogeneities of the deposited films along the radial direction of the electrode are unavoidable. (c) 2006 Elsevier Ltd. All rights reserved.