Effect of a new methacrylic monomer on diode parameters of Ag/p-Si Schottky contact

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Basman N., Uzun R., Ozcakir R., Erol I., ÇANKAYA G., Uzun O.

INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, cilt.46, sa.4, ss.190-196, 2016 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 46 Sayı: 4
• Basım Tarihi: 2016
• Dergi Adı: INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.190-196
• Ankara Üniversitesi Adresli: Hayır

Özet

1-[4-(prop-2-yn-1-yloxy) phenyl] ethanone-O-methacryloyloxime (POEMO) is a new methacrylic monomer with side chain alkyne. In this study, Ag/POEMO/p-Si Schottky metal-interlayer-semiconductor (MIS) diode was fabricated and its diode parameters were investigated. Using the forward bias current-voltage (I-V) characteristic, the ideality factor and barrier height of the MIS structure were found as 2.81 and 0.70 eV, respectively. The barrier height value of 0.70 eV obtained for Ag/POEMO/p-Si MIS diode was higher than the value of 0.64 of conventional Ag/p-Si Schottky diode. Cheung-Cheung and Norde methods were also used to extract ideality factor, barrier height and series resistance values, and the obtained results were compared.