THE EFFECT OF ANNEALING ON THE RESISTANCE OF A P/I/N STRUCTURE

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Copy For Citation

SERIN T., SERIN N.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.9, no.11, pp.2097-2100, 1994 (SCI-Expanded)

• Publication Type: Article / Article
• Volume: 9 Issue: 11
• Publication Date: 1994
• Doi Number: 10.1088/0268-1242/9/11/010
• Journal Name: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Page Numbers: pp.2097-2100
• Ankara University Affiliated: No

Abstract

The purpose of this paper is to investigate the effect of annealing on the series resistance R(s) and the shunt resistance R(sh) of a p/i/n type solar cell made of a-Si:H thin films in a SnO2/a-SiC:H(p-type)/a-Si:H/a-Si:H(n-type)/Al sandwich structure. The series resistance and the shunt resistance were determined from Dc current-voltage (I-V) characteristics by means of Warashina's method. Thermal annealing carried out in the temperature range 70-175 degrees C showed that the series resistance R(s) decreased and the shunt resistance R(sh) increased with increasing annealing temperature.