THE EFFECT OF ANNEALING ON THE RESISTANCE OF A P/I/N STRUCTURE

SERIN T., SERIN N.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.9, sa.11, ss.2097-2100, 1994 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 9 Sayı: 11
  • Basım Tarihi: 1994
  • Doi Numarası: 10.1088/0268-1242/9/11/010
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2097-2100
  • Ankara Üniversitesi Adresli: Hayır

Özet

The purpose of this paper is to investigate the effect of annealing on the series resistance R(s) and the shunt resistance R(sh) of a p/i/n type solar cell made of a-Si:H thin films in a SnO2/a-SiC:H(p-type)/a-Si:H/a-Si:H(n-type)/Al sandwich structure. The series resistance and the shunt resistance were determined from Dc current-voltage (I-V) characteristics by means of Warashina's method. Thermal annealing carried out in the temperature range 70-175 degrees C showed that the series resistance R(s) decreased and the shunt resistance R(sh) increased with increasing annealing temperature.