Temperature dependent electrical characteristics of Cu/CuS/n-Si/Au-Sb structure deposited by SILAR method

GÜZELDİR B., SAĞLAM M., ATEŞ A.

1st International Congress on Advances in Applied Physics and Materials Science, APMAS2011, Antalya, Turkey, 12 - 15 May 2011, vol.1400, pp.56-59, (Full Text) identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1400
  • Doi Number: 10.1063/1.3663085
  • City: Antalya
  • Country: Turkey
  • Page Numbers: pp.56-59
  • Keywords: CuS, Gaussian distribution, Sandwich structure, SILAR Method
  • Ankara University Affiliated: No

Abstract

We have reported a study of the I-V characteristics of Cu/CuS/n-Si/Au-Sb sandwich structure in a wide temperature range of 80-300 K by a step of 20 K, which are prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method. A decrease in the barrier height, an increase in the ideality factor and a nonlinearity in the activation energy plot with a decrease in temperature have been seen. The ideality factor and barrier height values as a function of the sample temperature have been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependence of the I-V characteristics of the Cu/CuS/n-Si/Au-Sb structure can reveal the existence of Gaussian distribution. The mean barrier height and the Richardson constant values are obtained from the modified Richardson plot. © 2011 American Institute of Physics.