Dislocation scattering of electrons in plastically deformed germanium

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Alkan B., Serin T., Unal B.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.11, no.7, pp.1046-1050, 1996 (SCI-Expanded)

• Publication Type: Article / Article
• Volume: 11 Issue: 7
• Publication Date: 1996
• Doi Number: 10.1088/0268-1242/11/7/013
• Journal Name: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Page Numbers: pp.1046-1050
• Ankara University Affiliated: No

Abstract

Using the correlation function variant of linear response theory, we calculated the electron mobility mu(D) due to charged dislocation lines in Ge as a function of temperature T.