The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol-gel method

Pakma O., Serin N., Serin T., ALTINDAL Ş.

Journal of Sol-Gel Science and Technology, cilt.50, sa.1, ss.28-34, 2009 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 50 Sayı: 1
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1007/s10971-009-1895-4
  • Dergi Adı: Journal of Sol-Gel Science and Technology
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.28-34
  • Anahtar Kelimeler: Al/TiO2/p-Si (MIS) structures, Interface state density, Preparation temperature, Series resistance, Sol-gel method
  • Ankara Üniversitesi Adresli: Evet

Özet

In this study, the forward bias current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Al/TiO2/p-Si (MIS) structures derived using the sol-gel method have been investigated and compared at various preparation temperatures. Experimental results show that the preparation temperatures strongly affect the electrical characteristics, such as ideality factor (n), zero-bias barrier height (φb0), series resistance (R s ) and interface states (N ss ). The MIS structures show non-ideal behavior of I-V characteristics with an n varying between 2.17 and 4.61. We have found that the φb0 and R s increase as the n decrease with increasing preparation temperature. The energy distribution profile of N ss of the Al/TiO 2/p-Si (MIS) structures was obtained from the forward bias I-V characteristics by taking into account both the bias dependence of the effective barrier height (φe) and R s for various preparation temperatures. The values of N ss increase from the midgap towards the top of valance band for various preparation temperatures. © 2009 Springer Science+Business Media, LLC.