Characterization of novel 1,3-bis-(p-iminobenzoic acid) indane Langmuir-Blodgett (LB) films, with and without Zn2+ ions

Uzunoglu T., SARI H., Capan R., Namli H., Turhan O.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.11, sa.10, ss.1408-1411, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 10
  • Basım Tarihi: 2009
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1408-1411
  • Anahtar Kelimeler: 1,3-bis-(p-iminobenzoic acid) indane, Langmuir-Blodgett (LB) thin films, Zn2+ ions, Electrical properties
  • Ankara Üniversitesi Adresli: Evet

Özet

Y-type 1,3-bis-(p-iminobenzoic acid) indane thin films with and without Zn2+ ions were grown by a LB technique to investigate the influence of the Zn2+ ions on their electrical properties. In this work, 1,3-bis-(p-iminobenzoic acid) indane molecules were deposited onto quartz crystal, glass and aluminium coated glass substrates, for optical and electrical measurements. A Quartz Crystal Microbalance (QCM) technique was used to monitor the reproducibility of the film growth. UV-visible spectroscopy was used to verify film deposition. From the electrical measurements, it was observed that Zn2+ ions affect the electrical properties of the LB films, by reducing the barrier height.