Low-Temperature and High-Quality Growth of Bi2O2 Se Layered Semiconductors via Cracking Metal-Organic Chemical Vapor Deposition

Kang M., Chai H., Jeong H. B., Park C., Jung I., Park E., ...Daha Fazla

ACS NANO, cilt.15, sa.5, ss.8715-8723, 2021 (SCI-Expanded, Scopus) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 15 Sayı: 5
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1021/acsnano.1c00811
  • Dergi Adı: ACS NANO
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Biotechnology Research Abstracts, Chemical Abstracts Core, Chimica, Compendex, EMBASE, INSPEC, MEDLINE
  • Sayfa Sayıları: ss.8715-8723
  • Anahtar Kelimeler: cracking metal-organic chemical vapor deposition, bismuth-oxy-selenide, low-growth temperature, epitaxial growth, field-effect transistor, photodetector, MOBILITY, EPITAXY, FILMS, WSE2
  • Ankara Üniversitesi Adresli: Evet

Özet

Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi2O2Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi2O2Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal-organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi2O2Se. The resulting Bi2O2Se films at very low growth temperature (similar to 300 degrees C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi2O2Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm(2)/(V.s) and photoresponsivity of 45134 A/W.