Determination of thermal annealing effect in intrinsic a-Si : H film

Serin T., Serin N., Tarimci C., Unal B.

JOURNAL OF NON-CRYSTALLINE SOLIDS, cilt.276, sa.1-3, ss.163-168, 2000 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 276 Sayı: 1-3
  • Basım Tarihi: 2000
  • Doi Numarası: 10.1016/s0022-3093(00)00265-9
  • Dergi Adı: JOURNAL OF NON-CRYSTALLINE SOLIDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.163-168
  • Ankara Üniversitesi Adresli: Hayır

Özet

In this study, the bias annealing effect on the density of state (DOS) in amorphous silicon film on single crystalline of silicon was investigated by means of Au/a-Si:H/c-Si/Al heterostructure. In order to fabricate the structure, at first, a-Si:H film was coated on a single crystalline silicon substrate by means of a de magnetron sputtering technique and then gold and aluminum metal contacts were applied on the top of a-Si:H and c-Si, respectively. The samples were annealed in the annealing temperature range 110-175 degrees C with the negative end of the applied bias voltage kept at the gold side and the capacitance-voltage characteristics heterostructure was measured. DOS around midgap of the i-region was determined by drive-level capacitance technique and the effect of thermal annealing on the DOS was indicated. (C) 2000 Elsevier Science B.V. All rights reserved.