Investigation of a p-CuO/n-TiO2 thin film heterojunction fabricated by the sol-gel process

YILDIRIM N., Serin T., Serin N.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.12, sa.5, ss.1153-1156, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 12 Sayı: 5
  • Basım Tarihi: 2010
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1153-1156
  • Anahtar Kelimeler: TiO2, CuO, Sol-gel, Heterojunction, DEPOSITION
  • Ankara Üniversitesi Adresli: Evet

Özet

The p-CuO/n-TiO2 thin film heterojunction is fabricated by the sol-gel technique on the glass substrate coated ATO (antimony doped tin oxide). The crystallinity of the junction materials is examined by an x-ray diffractometer (XRD). The electrical characterizations of the p-CuO/n-TiO2 heterojunction were measured by means of the current voltage and capacitance-voltage measurements at room temperature. It was observed that the junction between p-CuO and n-TiO2 was rectifying. It was determined that the ratio of forward current to the reverse current was about 139.9 at 1.5 V and the diode ideality factor was much greater than 2. The forward turn-on voltages were about 0.5 V. In order to analyze the electrical properties an energy-band diagram was proposed, it was deduced from the current-voltage measurements that the turn-on voltages were smaller than the barrier potentials which exhibited the existence of the interface defect states. The mechanism of charge transportation was discussed and a tunnel recombination process was proposed to explain its electrical properties.