Akademik Veri Yönetim Sistemi
Arabian Journal for Science and Engineering, 2025 (SCI-Expanded)
In this study, a gain flatness-enhanced, wideband pulse amplifier for ultrasonic instrumentation is presented. The power supply and a detection-and-signal-conditioning circuit were designed for the gain flatness enhancement and the control algorithm of the power supply was modified accordingly. To investigate the effects of the gain flatness enhancement, comparative measurements were performed on three conditions: without correction, with the conventional correction method, and with the correction method proposed in this study. Without correction, the pulse amplifier gain dropped by 1.1 dB across the 312.5 kHz to 20 MHz range under a 50-Ω load. Traditional methods reduced this to 0.3 dB, whereas the developed method achieved a reduction to 0 dB. Similarly, under a 470-pF load, the drop was 3.8 dB without compensation, 0.7 dB with conventional methods, and only 0.09 dB using the developed technique. This work also aims to increase penetration depth by boosting output amplitude. To improve the output voltage level, discrete circuit components were used instead of voltage-limited integrated circuit (IC)-based metal–oxide–semiconductor field-effect transistors (MOSFETs). This enabled a 150% increase in output voltage, from 200 to 500 Vpp. Consequently, the proposed gain-flatness-enhanced high-voltage and wideband pulse amplifier is expected to improve measurement accuracy in advanced ultrasonic systems, particularly in applications such as non-destructive testing (NDT), Doppler imaging, and material characterization.