Growth of CdS nanoparticles in Y- and Z-type Langmuir-Blodgett thin film using 1,3-bis-(p-iminobenzoic acid) indane

Uzunoglu, T.; SARI, HÜSEYİN; Capan, R.; Namli, H.; Turhan, O.; Stanciu, G.A.

doi:10.1007/s10854-012-0693-x

Growth of CdS nanoparticles in Y- and Z-type Langmuir-Blodgett thin film using 1,3-bis-(p-iminobenzoic acid) indane

Atıf İçin Kopyala

Uzunoglu T., SARI H., Capan R., Namli H., Turhan O., Stanciu G.

Journal of Materials Science: Materials in Electronics, cilt.23, sa.11, ss.1998-2004, 2012 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 23 Sayı: 11
Basım Tarihi: 2012
Doi Numarası: 10.1007/s10854-012-0693-x
Dergi Adı: Journal of Materials Science: Materials in Electronics
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.1998-2004
Ankara Üniversitesi Adresli: Evet

Özet

Cadmium sulphide (CdS) nanoparticles were formed in 1,3-bis-(p-iminobenzoic acid)indane by exposing Cd2+ doped Y- and Z-type multilayered Langmuir-Blodgett (LB) films toH2S gas. The growth of CdS nanoparticles were monitored by UV-visible spectroscopy measurements. It was observed that CdS nanoparticles in both Y- and Z-type LB films cause a blue-shift in absorption spectra. The surface morphology of LB films were characterized with atomic force microscopy DC electrical measurements were carried out for these LB films grown in a metal/LB film/metal sandwich structures with and without CdS nanoparticles. By analyzing I-V curves and assuming Schottky conduction mechanism the barrier height was found to be as 1.25 and 1.17 eV for Y-type unexposed and exposed samples; 1.18 and 1.25 eV for Z-type unexposed and exposed samples, respectively. © Springer Science+Business Media, LLC 2012.