Bandgap-Engineered High-Efficiency Blue- and Green-Emitting CdZnSeS/ZnS Quaternary Alloyed Core/Shell Colloidal Nanoplatelets for High-Performance Light-Emitting Devices


Khaligh A., Delikanli S., Canimkurbey B., Shabani F., IŞIK F., Demir H. V.

ACS APPLIED MATERIALS & INTERFACES, cilt.17, sa.23, ss.34206-34218, 2025 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 17 Sayı: 23
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1021/acsami.5c04630
  • Dergi Adı: ACS APPLIED MATERIALS & INTERFACES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, EMBASE, INSPEC, MEDLINE
  • Sayfa Sayıları: ss.34206-34218
  • Ankara Üniversitesi Adresli: Evet

Özet

Developing solution-processed blue emitters with high stability and photoluminescence quantum yield (PL-QY) is strongly desired for advanced optoelectronic devices. However, achieving high-efficiency blue emitters has been challenging, as the growth of shell layers required for passivation of nonradiative recombination pathways induces a considerable red shift toward longer wavelengths in colloidal nanocrystals. To address this limitation, in this work, we propose and demonstrate a meticulous synthetic approach to develop highly efficient CdZnSeS/ZnS quaternary alloyed core/shell nanoplatelets (NPLs) with controllable shell thickness and core composition, exhibiting blue or green emission, depending on the core composition. Starting with the CdSe0.7S0.3 alloyed core NPLs, a thin ZnS shell was first grown through the hot injection (HI) technique, followed by a Cd-to-Zn cation-exchange (CE) reaction, which blue-shifts the absorption/emission peaks. Then, a wide-gap ZnS shell was grown a second time to passivate the surface and obtain high-efficiency thick NPLs with a PL-QY of >70% over a broad spectrum (ca. 460-560 nm). Despite the increased thickness, the thick-shell quaternary NPLs exhibit a minimal PL red shift. The blue light-emitting diode (LED) device fabricated using these bandgap-engineered NPLs demonstrates an exceptionally high external quantum efficiency (EQE) of 11.3% at 482 nm with a low turn-on voltage (V-T) of less than 2.5 V, and a maximum luminance (L-max) of 12,451 cd/m(2). These advanced heterostructures of NPLs with highly efficient tunable emission in blue and green provide a great platform for developing high-performance light-emitting devices, especially for LEDs and lasers.