Spin Persistent Current of One Electron Quantum Dot with Gaussian Confinement

Boda A., Boyacıoğlu B., Chatterjee A.

61st DAE-Solid State Physics Symposium, Bhubaneswar, Hindistan, 26 - 30 Aralık 2016, cilt.1832, (Tam Metin Bildiri)

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1832
  • Doi Numarası: 10.1063/1.4980626
  • Basıldığı Şehir: Bhubaneswar
  • Basıldığı Ülke: Hindistan
  • Anahtar Kelimeler: Quantum dots, Persistent current and Gaussian confinement
  • Ankara Üniversitesi Adresli: Evet

Özet

We have investigated the ground state persistent current of one-electron semiconductor quantum dot with a Gaussian confinement in the presence of an external magnetic field. The spin persistent current has been calculated by using a method of numerical diagonalization of the Hamiltonian matrix within the effective-mass approximation. It is shown that the persistent current almost increases with increasing the magnetic field for a particular value of the temperature. It is also shown that as a function of the quantum dot size, the diamagnetic current exhibits a maximum at a certain confinement length. It is furthermore shown that for a shallow potential, the persistent current shows an interesting maximum structure as a function of the depth of the potential.