Crystallization of Ge in SiO2 matrix by femtosecond laser processing

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Salihoglu O., Kurum U., YAĞLIOĞLU H. G., ELMALI A., AYDINLI A.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, cilt.30, sa.1, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 30 Sayı: 1
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1116/1.3677829
  • Dergi Adı: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Ankara Üniversitesi Adresli: Evet

Özet

Germanium nanocrystals embedded in a siliconoxide matrix has been fabricated by single femtosecond laser pulse irradiation of germanium doped SiO2 thin films deposited with plasma enhanced chemical vapor deposition. SEM and AFM are used to analyze surface modification induced by laser irradiation. Crystallization of Ge in the oxide matrix is monitored with the optic phonon at 300 cm(-1) as a function of laser fluence. Both the position the linewidth of the phonon provides clear signature for crystallization of Ge. In PL experiments, strong luminescence around 600 nm has been observed. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3677829]