Bio-inspired diodes made of chitosan/p-Si sandwich structure

ÖZEL K., Kocak Y.

Sensors and Actuators A: Physical, cilt.360, 2023 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 360
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1016/j.sna.2023.114521
  • Dergi Adı: Sensors and Actuators A: Physical
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Biotechnology Research Abstracts, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Bio-based materials, Diodes, Semiconductors
  • Ankara Üniversitesi Adresli: Evet

Özet

Bio-origin materials are promising for encouraging the development of low-cost and non-toxic electronic technologies. Therefore, it is of utmost importance to unravel the structure to property relationships in bio-based electronic devices. In this study, we report the performance investigation of the chitosan-based diodes as a function of chitosan thickness using the device structure of Ag/Chitosan/p-Si. The experimental measurements disclose that the electrical characteristics of the devices are is strongly dependent on the thickness of chitosan layer. Herein, the device with 49 nm thick chitosan layer exhibits remarkable rectification properties with a high rectification ratio (RR) of 1300 at ± 5 V, a low ideality factor (n) of 2.89, a large barrier height (∅B) of 0.83 eV and a relatively low leakage current (Io) of 9.23 nA. Besides, the series resistance values of the devices are also analyzed using Cheung's and Norde's approximations. The main goal of this work is to pave the way for the widespread use of nature-inspired materials in the electronics industry and to shed light on the production of high-performance bio-based diodes.