Modeling of radiating effects in transistors

Aldamzharov K., Tuyakbayev A., Tuyakbayev D.

3rd Microwaves, Radar and Remote Sensing Symposium, MRRS-2011, Kiev, Ukrayna, 25 - 27 Ağustos 2011, ss.371-373, (Tam Metin Bildiri) identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/mrrs.2011.6053677
  • Basıldığı Şehir: Kiev
  • Basıldığı Ülke: Ukrayna
  • Sayfa Sayıları: ss.371-373
  • Ankara Üniversitesi Adresli: Evet

Özet

In this work the single-level model for determination of the constant of radiating change of lifetime of minority carriers in the base of n-p-n transistors, also DLTS spectra in the base area of n-p-n transistors are modeled and results of calculations are obtained. © 2011 IEEE.