Modeling of radiating effects in transistors

Aldamzharov K., Tuyakbayev A., Tuyakbayev D.

3rd Microwaves, Radar and Remote Sensing Symposium, MRRS-2011, Kiev, Ukraine, 25 - 27 August 2011, pp.371-373 identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/mrrs.2011.6053677
  • City: Kiev
  • Country: Ukraine
  • Page Numbers: pp.371-373
  • Ankara University Affiliated: Yes

Abstract

In this work the single-level model for determination of the constant of radiating change of lifetime of minority carriers in the base of n-p-n transistors, also DLTS spectra in the base area of n-p-n transistors are modeled and results of calculations are obtained. © 2011 IEEE.