ELECTRON-MOBILITY IN GAAS DUE TO PIEZOELECTRIC SCATTERING

ALKAN B., UNAL B., OZDEMIR A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.10, sa.11, ss.1458-1462, 1995 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 10 Sayı: 11
  • Basım Tarihi: 1995
  • Doi Numarası: 10.1088/0268-1242/10/11/005
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1458-1462
  • Ankara Üniversitesi Adresli: Hayır

Özet

Theoretical studies so far on piezoelectric scattering have resulted in a mobility behaviour of mu similar to T--1/2 in which mu continues to fall indefinitely with increasing temperature T. Such a behaviour cannot tell us where this scattering will become unimportant, as might be expected on physical grounds, The correct behaviour should be a falling curve first, followed by a gradually increasing one when the scattering ceases to be effective. In this work, by using the force-force correlation function technique within the linear response formalism, we obtained a mu versus T curve that shows just this behaviour.