First-Principle Predictions of Electronic Properties and Half-Metallic Ferromagnetism in Vanadium-Doped Rock-Salt SrO

Berber M., Doumi B., Mokaddem A., MOĞULKOÇ Y., Sayede A., Tadjer A.

JOURNAL OF ELECTRONIC MATERIALS, cilt.47, sa.1, ss.449-456, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 47 Sayı: 1
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1007/s11664-017-5793-1
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.449-456
  • Anahtar Kelimeler: Electronic structures, magnetic properties, half-metallic gap, ferromagnetic arrangement, CR, PHOTOEMISSION, SPINTRONICS, GAN
  • Ankara Üniversitesi Adresli: Evet

Özet

We have used first-principle methods of density functional theory within the full potential linearized augmented plane wave scheme to investigate the electronic and magnetic properties of cubic rock-salt, SrO, doped with vanadium (V) impurity as Sr1-x V (x) O at various concentrations, x = 0.25, 0.5, and 0.75. We have found that the ferromagnetic state arrangement of Sr1-x V (x) O is more stable compared to the anti-ferromagnetic state configuration. The electronic structures have a half-metallic (HM) ferromagnetic (F) behavior for Sr0.75V0.25O and Sr0.5V0.5O. This feature results from the metallic and semiconducting natures of majority-spin and minority-spin bands, respectively. The HMF gap decreases with the increasing concentration of vanadium atoms due to the broadening of 3d (V) levels in the gap, and hence the Sr0.25V0.75O becomes metallic ferromagnetic. The Sr0.75V0.25O revealed a large HM gap with spin polarization of 100%. The Sr1-x V (x) O compound at low concentrations seems a better candidate to explore the half-metallicity for practical spintronics applications.