Akademik Veri Yönetim Sistemi
ACS APPLIED NANO MATERIALS, cilt.6, sa.19, ss.17482-17490, 2023 (SCI-Expanded)
This study examines the high-frequency-dependent characteristics of the PbO/SnO2 double-layer semiconductor (DLS) structures. Recently, researchers have been particularly interested in such structures in terms of their use in electrical and photovoltaic applications. A PbO/SnO2 double layer was successfully coated on a p-type Si substrate (100) wafer with a resistance of 10 ohm cm and a thickness of 280 mu m. The Al Schottky (round dot) connections, which have a thickness of 124 nm and a diameter of 1.3 mm, were produced by thermal evaporation. The present study proposes to measure the conductance-voltage (G-V) and capacitance-voltage (C-V) values of the studied Al/PbO/SnO2/p-Si Schottky diode for the frequencies of 500 kHz, 800 kHz, and 1 MHz at a temperature of 300 K, which has been suggested for the first time in literature. Due to the presence of surface states (N-ss), PbO/SnO2 double-layer, and series resistance R-s, the C-V and G-V plots show inversion, depletion, and accumulation zones depending on the strong frequency for each frequency tested. Based on the tested frequencies, the reverse-biased C-2-V curves are used to compute the fundamental electrical characteristics of the Al/PbO/SnO2/p-Si structures, including the depletion layer (W-D), Fermi energy level (E-F), diffusion potential (V-D), and thickness barrier height (circle divide(B)). We also investigated the capacitance features and the energy density distribution of surface states (N-ss) in the PbO/SnO2 double-layer structure by utilizing the measured values of G-V and C-V. The values of circle divide(B), V-D, and N-ss were observed to be 0.54 0.34, and 3.19 10 12 eV(-1) cm(-2) at 500 kHz, while they were 0.88 0.68, and 1.96 eV(-1) cm(-2) at 800 kHz and 0.95, 0.75, and 1.47 eV(-1) cm(-2) at 1 MHz, respectively. It was discovered that the capacitance characteristics of the PbO/SnO2 double-layer structure were substantially dependent on the applied high frequencies. Furthermore, the C-V and G-V measurements revealed that the series resistance and the interface state density of the studied Al/PbO/SnO2/p-Si Schottky diode were critical parameters that significantly affect the electrical parameters offered by the PbO/SnO2 double-layer nanostructure. The results of the study reveal that the manufactured device exhibits outstanding electric characteristics and support the possibility of using DL thin films in electronic devices.