Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 ≤ x ≤ 0.135) layers
Current Applied Physics, vol.10, no.3, pp.838-841, 2010 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 10 Issue: 3
- Publication Date: 2010
- Doi Number: 10.1016/j.cap.2009.10.004
- Journal Name: Current Applied Physics
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.838-841
- Keywords: Electronic transport, InGaN, MIT
- Open Archive Collection: AVESIS Open Access Collection
- Ankara University Affiliated: No
Abstract
The low-temperature conductivity of InxGa1-xN alloys (0.06 ≤ x ≤ 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, neither the Kubo-Greenwood nor Born approach were able to describe the transport properties of the InxGa1-xN alloys. In addition, all of the InxGa1-xN alloys took place below the Ioeffe-Regel regime with their low conductivities. The observed behavior is discussed in the framework of the scaling theory. With decreasing indium composition, a decrease in thermal activation energy is observed. For the metal-insulator transition, the critical indium composition is obtained as xc = 0.0543 for InxGa1-xN alloys. © 2009 Elsevier B.V. All rights reserved.