Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 ≤ x ≤ 0.135) layers

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Yildiz A., LİŞESİVDİN S. B., Tasli P., Ozbay E., KASAP M.

Current Applied Physics, vol.10, no.3, pp.838-841, 2010 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 10 Issue: 3
  • Publication Date: 2010
  • Doi Number: 10.1016/j.cap.2009.10.004
  • Journal Name: Current Applied Physics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.838-841
  • Keywords: Electronic transport, InGaN, MIT
  • Ankara University Affiliated: No

Abstract

The low-temperature conductivity of InxGa1-xN alloys (0.06 ≤ x ≤ 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, neither the Kubo-Greenwood nor Born approach were able to describe the transport properties of the InxGa1-xN alloys. In addition, all of the InxGa1-xN alloys took place below the Ioeffe-Regel regime with their low conductivities. The observed behavior is discussed in the framework of the scaling theory. With decreasing indium composition, a decrease in thermal activation energy is observed. For the metal-insulator transition, the critical indium composition is obtained as xc = 0.0543 for InxGa1-xN alloys. © 2009 Elsevier B.V. All rights reserved.