Comprehensive structural analysis and electrical properties of (Cu, Al and In)-doped SnO2 thin films

GÜRAKAR S., Serin T.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, cilt.251, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 251
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1016/j.mseb.2019.114445
  • Dergi Adı: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Anahtar Kelimeler: SnO2, Doping, Williamson-hall, Size-strain plot, Electrical properties, OPTICAL-PROPERTIES, SPRAY-PYROLYSIS, PHYSICAL-PROPERTIES, WILLIAMSON-HALL, NANOPARTICLES, SIZE, NANOSTRUCTURES, STRAIN, TEMPERATURE, FLUORINE
  • Ankara Üniversitesi Adresli: Evet

Özet

The undoped, Cu, Al and In (2 at. %) doped SnO2 thin films are deposited on the glass substrate by spray pyrolysis. The effect of Cu, Al and In doping on the structural properties of SnO2 films are investigated by X-ray diffraction (XRD) method. All structural parameters including crystallite size, lattice strain, stress and energy density values are determined from three different models based on Williamson-Hall (W-H) and size-strain plot (SSP) methods. The obtained results reveal that strain values are almost the same but crystallite size, stress and energy density values of the films are greatly affected by dopant atoms. Surface morphologies are analyzed using atomic force microscopy (AFM) measurements. The electrical properties are investigated by Hall effect measurements at room temperature. The number of valance electrons of dopant atoms are less than Sn, as a result the decrement in electrical conductivity and the compensation of n-type conductivity are observed.